III-Nitride Materials
and Devices Group
The University of New Mexico
Welcome
The III-nitride materials and devices group is located in the Center for High Technology Materials (CHTM) at the University of New Mexico and is directed by Professor Daniel Feezell. The research interests of the group include epitaxial growth, fabrication, and characterization of group III-nitride materials and devices with a focus on nonpolar/semipolar orientations, solid-state lighting and high-efficiency LEDs, III-nitride nanophotonics, superluminescent diodes, visible edge-emitting and vertical-cavity surface-emitting lasers (VCSELs), power electronics, intersubband photodetectors, and nanoscale selective-area epitaxy.
III-Nitride Materials
High-Speed LEDs
Plasmonic Nanostructures
III-Nitride Materials
Left to right: Serdal Okur, Olivia Johnson, Mike Fairchild, Ashwin Rishinaramangalam, Morteza Monavarian, Prof. Feezell, Andrew Aragon, Mohsen Nami, Rhett Eller, Saadat Mishkat-Ul-Masabih, Isaac Stricklin, Arman Rashidi, Kenny DaVico
News
09/2016
Prof. Feezell has received a grant from the Department of Energy (DOE) to develop superluminescent diodes for smart lighting systems. Read more here.
06/2016
Three papers were presented at the Electronic Materials Conference at the University of Deleware.
05/2016
Prof. Feezell received the UNM School of Engineering Junior Faculty Research Award.
08/2015
Prof. Feezell has received the Director's Fellowship for the DARPA Young Faculty Award.
06/2015
Prof. Feezell received a grant from ARO/ONR to develop high-speed nonpolar and semipolar LEDs.
01/2015
Prof. Feezell has received an NSF Faculty Early Career Development (CAREER) Award to study nonpolar and semipolar GaN-based vertical-cavity surface-emitting lasers (VCSELs). The abstract on the NSF website can be accessed here.
10/2014
Prof. Feezell's postdoctoral advisor at UCSB, Prof. Shuji Nakamura, received the Nobel Prize in Physics for the invention of blue GaN-based LEDs. Congratualtions, Shuji!
06/2014
Postdoctoral Researcher Ashwin Rishinaramangalam presented a paper at the 2014 Electronic Materials Conference entitled "Ordered Arrays of III-Nitride Core-Shell Nanostructures Using Selective-Area Epitaxy."
02/2014
Prof. Feezell published a review article in Compound Semiconductor entitled "The Evolving GaN VCSEL."
12/2013
Prof. Feezell gave a guest lecture at Southwestern Indian Polytechnic Institue entitled "Light-Emitting Diodes, Solid-State Lighting, and Smart Lighting"
05/2013
Dr. Feezell was awarded the prestigeous DARPA Young Faculty Award for “High-Speed Nonpolar InGaN/GaN Light-Emitting Diodes Using Plasmonic Core-Shell Nanowires.”
04/2013
Prof. Feezell and Prof. Shuji Nakamura from UCSB co-authored a book chapter entitled "Nonpolar and Semipolar Group III-Nitride Lasers" which appears in "Semiconductor lasers: Fundamentals and applications" by Woodhead Publishing (ISBN13: 9780857091215)
