Book Chapters:

D. Feezell and S. Nakamura, “Nonpolar and Semipolar Group III-Nitride Lasers,” in Semiconductor Lasers:  Fundamentals and Applications, Edited by A. Baranov and E Tournie, Woodhead Publishing, ISBN13: 9780857091215, Apr. 2013.

 

Journal Articles:

A. Rishinaramangalam, M. Nami, M. Fairchild, D. Shima, G. Balakrishnan, S. Brueck, and D. Feezell, “Semipolar InGaN/GaN Nanostructure Light-Emitting Diodes on c-Plane Sapphire,” Appl. Phys. Express, vol. 9, pp. 032101(1-4), Feb. 2016.

 

A. Rishinaramangalam, S. Ul Masabih, M. Fairchild, J. Wright, D. Shima, G. Balakrishnan, I. Brener, S. Brueck, and D. Feezell, “Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices,” J. Electron. Mat., vol. 44, pp. 1255-1262, May 2015.

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M. Nami and D. Feezell, “Optical Properties of Ag-Coated GaN/InGaN Axial and Core-Shell Nanowire Light-Emitting Diodes,” J. Opt., vol. 17, pp. 025004(1-9), Jan. 2015.

 

M. Nami and D. Feezell, “Optical Properties of Plasmonic Light-Emitting Diodes Based on Flip-Chip III-Nitride Core-Shell Nanowires,” Opt. Express, vol. 24, pp. 29445-29455, Nov. 2014.

 

C. Holder, J. Leonard, R. Farrell, D. Cohen, B. Yonkee, J. Speck, S. DenBaars, S. Nakamura, and D. Feezell, “Nonpolar III-Nitride Vertical-Cavity Surface-Emitting Lasers with a Polarization Ratio of 100% Fabricated Using Photoelectrochemical Etching,” Appl. Phys. Lett., vol. 105, pp. 031111(1-5), July 2014.

 

D. Feezell, “The Evolving GaN VCSEL,” Compound Semiconductor Magazine, vol. 20, issue 1, pp. 44-49, Feb. 2014.

 

M. Nami, A. Rishinaramangalam, and D. Feezell, “Analysis of Light Extraction Efficiency for Gallium Nitride-Based Coaxial Microwall Light-Emitting Diodes,” Phys. Status Solidi C, vol. 11 No. 3–4, 766– 770 Jan. 2014.

 

M. Hardy, F. Wu, C. Wang, Y. Zhao, D. Feezell, S. Nakamura, J. Speck, S. DenBaars, "Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes,"Photon. Technol. Lett., vol. 26, pp. 43-46, Jan. 2014.

 

N. Pfaff, K. Kelchner, D. Feezell, S. Nakamura, S. DenBaars, J. Speck, “Thermal performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes,” Appl. Phys. Express, vol. 6, pp. 092104(1-4), Aug. 2013.

 

M. Hardy, C. Holder, D. Feezell, S. Nakamura, J. Speck, D. Cohen, and S. DenBaars, “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes,” Appl. Phys. Lett., vol. 103, pp.  081103(1-4), Aug. 2013.

 

D. Feezell, Y. Sharma, and S. Krishna, “Optical Properties of Nonpolar III-Nitrides for Intersubband Photodetectors,” J. Appl. Phys., vol. 113, pp.  133103(1-7), Apr. 2013.

 

D. Feezell, J. Speck, S. DenBaars, and S. Nakamura “Properties and Performance of Semipolar (20-2-1) Group III Nitride Light-Emitting Diodes,” J. Disp. Tech., vol. 9, pp.  190-198, Mar. 2013.

 

A. Rishinaramangalam, M. Fairchild, S. Hersee, G. Balakrishnan, and D. Feezell, “Three-Dimensional GaN Templates for Molecular Beam Epitaxy of Nonpolar InGaN/GaN Coaxial Light-Emitting Diodes,” J. Vac. Sci. Technol. B, vol. 31, pp.  03C107(1-7), Feb. 2013.

 

S. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C. Pan, C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. Speck, and S. Nakamura, “Development of Gallium-Nitride-Based Light-Emitting Diodes (LEDs) and Laser Diodes for Energy-Efficient Lighting and Displays,” Acta Materialia, vol. 61, pp. 945-951, Feb. 2013.

 

Y. Zhao, Q. Yan, D. Feezell, K. Fujito, C. Van de Walle, J. Speck, S. DenBaars, and S. Nakamura, “Optical polarization characteristics of semipolar (30-31) and (30-3-1) InGaN/GaN light-emitting diodes,” Opt. Express, vol.  21, pp. A53-A59, Dec. 2012.

 

C. Holder, J. Speck, S. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of Nonpolar GaN-Based Vertical Cavity Surface-Emitting Lasers,” Appl. Phys. Express, vol. 5, pp.  092104(1-3), Sep. 2012.

 

C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. Speck, S. Nakamura, and S. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (20-2-1) Blue Light-Emitting Diodes,” Appl. Phys. Express vol. 5, pp. 102103(1-4), Sep. 2012.

 

Y. Kawaguchi, C. Huang, Y. Wu, Q. Yan, C. Pan, Y. Zhao, S. Tanaka, K Fujito, D. Feezell, C. Van de Walle, S. DenBaars, and S. Nakamura, “Influence of Polarity on Carrier Transport in Semipolar (20-21) and (20-2-1) Multiple-Quantum-Well Light-Emitting Diodes,” Applied Physics Letters, vol. 100, pp. 231110(1-4), Jun. 2012.

 

C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. Speck, S. Nakamura, S. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar (20-2-1) Single-Quantum-Well Blue Light-Emitting Diodes,” Applied Physics Express, vol. 5, pp.  062103(1-3), Jun. 2012.

 

Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. Pan, Y. Kawaguchi, K Fujito, C. Van de Walle, J. Speck, S. DenBaars, S. Nakamura, and D. Feezell, “Indium Incorporation and Emission Properties of Nonpolar and Semipolar InGaN Quantum Wells,” Applied Physics Letters, vol. 100, pp. 201108(1-4), May 2012.

 

P. Hsu, M. Hardy, F. Wu, I. Koslow, E. Young, A. Romanov, K. Fujito, D. Feezell, S. DenBaars, J. Speck, and S. Nakamura, “444.9 nm Semipolar (11-22) Laser Diodes Grown on an Intentionally Stress Relaxed InGaN Waveguiding Layer,” Applied Physics Letters, vol. 100, pp. 021104(1-4), Jan. 2012.

 

C. Huang, M. Hardy, K. Fujito, D. Feezell, J. Speck, S. DenBaars, and S. Nakamura, “Demonstration of 505 nm Laser Diodes Using Wavelength-Stable (20-2-1) InGaN/GaN Quantum Wells,” Applied Physics Letters, vol. 99, pp. 241115(1-3), Dec. 2011.

 

R. Farrell, D. Haeger, P. Hsu, K. Fujito, D. Feezell, S. DenBaars, J. Speck, and S. Nakamura, “Determination of Internal Parameters for AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes,” Applied Physics Letters, vol. 99, pp. 171115(1-3), Oct. 2011.

 

R. Farrell, D. Haeger, P. Hsu, M. Schmidt, K. Fujito, D. Feezell, S. DenBaars, J. Speck, and S. Nakamura, “High-Power Blue-Violet AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes,” Applied Physics Letters, vol. 99, pp. 171113(1-3), Oct. 2011.

 

C. Huang, Q. Yan, Y. Zhao, K. Fujito, D. Feezell, C. Van de Walle, J. Speck, S. DenBaars, and S. Nakamura, “Influence of Mg-Doped Barriers on Semipolar (20-21) Multiple-Quantum-Well Green Light-Emitting Diodes,” Applied Physics Letters, vol. 99, pp. 141114(1-3), Oct. 2011.

 

M. Hardy, D. Feezell, S. DenBaars, and S. Nakamura, “Group III-Nitride Lasers:  A Materials Perspective,” Materials Today, vol. 14, pp.  408-415, Sep. 2011.

 

R. Farrell, D. Haeger, P. Hsu, M. Hardy, K. Kelchner, K. Fujito, D. Feezell, U. Mishra, S. DenBaars, J. Speck, and S. Nakamura, “AlGaN-Cladding-Free m-plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers,” Applied Physics Express, vol. 4, pp.  092105(1-3), Sep. 2011.

 

Y. Zhao, S. Tanaka, Q. Yan, C. Huang, R. Chung, C. Pan, K. Fujito, D. Feezell, C. Van de Walle, J. Speck, S. DenBaars, and S. Nakamura, “High Optical Polarization Ratio from Semipolar (20-2-1) Blue-Green InGaN/GaN Light-Emitting Diodes,” Applied Physics Letters, vol. 99, pp. 051109(1-3), Aug. 2011.

 

Y. Zhao, S. Tanaka, C. Pan, K. Fujito, D. Feezell, J. Speck, S. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2,” Applied Physics Express, vol. 4, pp.  082104(1-3), Jul. 2011.

 

D. Feezell, M. Schmidt, S. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” Invited Article MRS Bulletin: Nonpolar and Semipolar Group III Nitride-Based Materials, vol. 34, pp.  318-323, May 2009.

 

A. Tyagi, H. Zhong, R. Chung, D. Feezell, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura, “InGaN/GaN Laser Diodes on Semipolar (10-11) Bulk GaN Substrates,” Phys. Stat. Sol. (c), vol. 5, pp.  2108-2110, Mar. 2008.

 

D. Feezell, J. Speck, S. DenBaars, and S. Nakamura, “Nonpolar Gallium Nitride Laser Diodes Are The Next New Blue,” Invited Article Laser Focus World Magazine, vol. 43, pp. 79-83, Oct. 2007.

 

R. Farrell, D. Feezell, M. Schmidt, D. Haeger, K. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura, “Continuous-Wave Operation of AlGaN-Cladding-Free Nonpolar m-plane InGaN/GaN Laser Diodes,” Japanese Journal of Applied Physics Express Letters, vol. 46, pp.  L761-L763, Aug. 2007.

 

A. Tyagi, H. Zhong, R. Chung, D. Feezell, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura, “Semipolar (10-11) InGaN/GaN Laser Diodes on Bulk GaN Substrates,” Japanese Journal of Applied Physics Express Letters, vol. 46, pp.  L444-L445, May 2007.

 

D. Feezell, R. Farrell, M. Schmidt, H. Yamada, M. Ishida, S. DenBaars, D. Cohen, and S. Nakamura, “Thin Metal Intra-Cavity Contact and Lateral Current-Distribution Scheme for GaN-Based Vertical-Cavity Lasers,” Applied Physics Letters, vol. 90, pp. 181128(1-3), May 2007.

 

D. Feezell, M. Schmidt, R. Farrell, K. Kim, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura, “AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes,” Japanese Journal of Applied Physics Express Letters, vol. 46, pp.  L284-L286, Mar. 2007.

 

M. Schmidt, K. Kim, R. Farrell, D. Feezell, D. Cohen, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-plane InGaN/GaN Laser Diodes,” Japanese Journal of Applied Physics Express Letters, vol. 46, pp.  L190-L191, Feb. 2007.

 

M. Mehta, D. Feezell, D. Buell, A. Jackson, L. Coldren, and J. Bowers, “Electrical Design Optimization of Single-Mode Tunnel Junction-Based Long-Wavelength VCSELs,” IEEE Journal of Quantum Electronics, vol. 42, no. 7, pp. 675-682, Jul. 2006.

 

D. Feezell, D. Buell, D. Lofgreen, M. Mehta, and L. Coldren, “Optical Design of InAlGaAs Low-Loss Tunnel-Junction Apertures for Long-Wavelength Vertical Cavity Lasers,” IEEE Journal of Quantum Electronics, vol. 42, no. 5, pp. 494-499, May 2006.

 

D. Buell, D. Feezell, and L. Coldren, “Molecular Beam Epitaxy of InP-Based Alloys for Long-Wavelength Vertical-Cavity Lasers,” Journal of Vacuum Science Technology B, vol. 24, no. 3, pp. 1544-1547, May 2006.

 

D. Feezell, L. Johansson, D. Buell, and L. Coldren, “Efficient Modulation of InP-Based 1.3mm VCSELs with AsSb-Based DBRs,” IEEE Photonics Technology Letters, vol. 17, no. 11, pp. 2253-2255, Nov. 2005.

 

D. Feezell, D. Buell, and L. Coldren, “InP-Based 1.3 – 1.6mm VCSELs with Selectively Etched Tunnel-Junction Apertures on a Wavelength Flexible Platform,” IEEE Photonics Technology Letters, vol.17, no. 10, pp. 2017-2019, Oct. 2005.

 

D. Feezell, D. Buell, and L. Coldren, “Continuous Wave Operation of All-Epitaxial InP-Based 1.3mm VCSELs with 57% Differential Quantum Efficiency,” Electronics Letters, vol. 41, no. 14, pp. 803-04, Jul. 2005.

 

M.H.M. Reddy, T. Asano, D. Feezell, D. Buell, A. Huntington, R. Koda, and L. Coldren, “Selectively Etched Tunnel Junction for Lateral Current and Optical Confinement in InP-Based Vertical Cavity Lasers,” Journal of Electronic Materials, vol. 33, no. 2, pp. 118-22, Feb. 2004.

 

T. Asano, D. Feezell, R. Koda, M.H.M. Reddy, D. Buell, A. Huntington, E. Hall, S. Nakagawa, and L.  Coldren, “InP-Based All-Epitaxial 1.3mm VCSELs with Selectively Etched AlInAs Apertures and Sb-Based DBRs,” IEEE Photonics Technology Letters, vol. 15, no. 10, pp. 1333-5, Oct. 2003.

 

M.H.M. Reddy, D. Buell, D. Feezell, T. Asano, R. Koda, A. Huntington, and L. Coldren, “Continuous-Wave Operation of 1.55mm Vertical-Cavity Surface-Emitting Laser with Digital-Alloy Active Region Using Submonolayer Superlattices,” IEEE Photonics Technology Letters, vol. 15, no. 7, pp. 891-3, Jul. 2003.

 

M.H.M. Reddy, D. Buell, T. Asano, R. Koda, D. Feezell, A. Huntington, and L. Coldren, “Lattice-matched Al0.95Ga0.05AsSb Oxide for Current Confinement in InP-Based Long Wavelength VCSELs,” Journal of Crystal Growth, vol. 251, Apr., 2003.

 

M.H.M. Reddy, D. Buell, A. Huntington, T. Asano, R. Koda, D. Feezell, D. Lofgreen, and L. Coldren, “Al0.95Ga0.05As0.56Sb0.44 for Lateral Oxide-Confinement Layer in InP-Based Devices,” Applied Physics Letters, vol. 82, no. 9, pp. 1329-31, Mar. 2003.

 

Conference Presentations:

M. Behzadirad, N. Dawson, M. Nami, A. Rishinaramangalam, D. Feezell, and T. Busani, “GaN Nanowire Tip for High-Aspect-Ratio Nanoscale AFM Metrology,” 2016 SPIE Optics and Photonics Conference, San Diego, Aug. 2016.

 

C. Haughn, S. Lee, S. Masabih, D. Cohen, D. Feezell, S. DenBaars, G. Garrett, M. Wraback, “Optical characterization of UV VCSEL structure grown on m-plane GaN,” 2016 Electronic Materials Conference (EMC), Newark, DE, June 2016.

 

A. Rishinaramangalam, M. Fairchild, M. Nami, O. Johnson, D. Shima, G. Balakrishnan, S. Brueck and D. Feezell, “Semipolar (10-11)  GaN-Based Core-Shell Nanostructure LEDs on c-Plane Sapphire Using Selective-Area MOCVD,” 2016 Electronic Materials Conference (EMC), Newark, DE, June 2016.

 

M. Nami, R. Eller, S Okur, A. Rishinaramangalam, S. Liu, I. Brener, and D. Feezell, “Effect of Growth Temperature and Mask Geometry on Morphology and Photoluminescence of GaN/InGaN Core-Shell Nanowires,” 2016 Electronic Materials Conference (EMC), Newark, DE, June 2016.

 

S. Okur, M. Nami, A. Rishinaramangalam, S. H. Oh, S. Liu, I. Brener, S.P. DenBaars, and D. Feezell, “Effect of active region design on carrier dynamics in semipolar (20-2-1) InGaN/GaN light-emitting diodes,” 2016 Electronic Materials Conference (EMC), Newark, DE, June 2016.

 

A. Rishinaramangalam, M. Nami, B. Bryant, R. Eller, D. Shima, G. Balakrishnan, S. Brueck, and D. Feezell, “Ordered arrays of bottom-up III-nitride core-shell nanostructures,” Invited 2015 SPIE Optics and Photonics Conference, San Diego, Aug. 2015.

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C. Li, J. Wright, S. Liu, J. Figiel, B. Leung, T. Luk, I. Brener, D. Feezell, S. Brueck, and G. Wang, “Nonpolar InGaN/GaN multi-quantum-well core-shell nanowire lasers,” 2015 Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, May 2015.

 

A. Kazemi, B. Klein, M. Nami, J. Kim, M. Allen, J. Allen, B. Wenner, D. Brown, A. Urbas, D. Feezell, B. Mitchell, S. Krishna, “Investigation of plasmonic enhancement in a quantum dot-in-a-well structure,” 2015 SPIE Photonics West (OPTO) Conference, 937019-937019-10, San Francisco, CA, Feb. 2015.

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D. Feezell, “Status and Future of GaN-Based Vertical-Cavity Surface-Emitting Lasers,” Ivited 2015 SPIE Photonics West (OPTO) Conference, San Francisco, Feb. 2015.

 

D. Feezell, “Light-Emitting Diodes Based on Ordered Arrays of III-Nitride Core-Shell Nanosotructures,” Invited 2015 Electronic Materials and Applications Conference, Orlando, Jan. 2015.

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M. Nami and D. Feezell, “Investigation of Purcell Factor and Light Extraction Efficiency in Ag-Coated GaN/InGaN Core-Shell and Axial Hexagonal Nanowires,” International Conference on Nanoscience and Technology, Vail, CO, July 2014.

 

A. Rishinaramangalam, S. Ul Masabih, M. Fairchild, J. Wright, D. Shima, G. Balakrishnan, S. Brueck, and D. Feezell, “Ordered Arrays of Core-Shell Nanostructures Using Selective-Area Epitaxy,” Electronic Materials Conference (EMC), Santa Barbara, CA, June 2014.

 

M. Nami, J. Wright, and D. Feezell, “Investigation of Purcell Factor and Light Extraction Efficiency in Ag-Coated GaN/InGaN Core-Shell Nanowires,” Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, May 2014.

 

A. Rishinaramangalam, M. Fairchild, S. Ul Masabih, D. Shima, G. Balakrishnan, and D. Feezell, “Selective-Area Growth of III-Nitride Core-Shell Nanowalls for Light-Emitting and Laser Diodes,” Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, May 2014.

 

D. Feezell, “Nonpolar/Semipolar III-Nitrides for High-Efficiency Optoelectronics,” Plasma-Therm Nanotechnology Symposium, Palo Alto, CA, Sep. 2013.

 

D. Feezell, Y. Sharma, and S. Krishna, “Optical Properties of Nonpolar III-Nitrides for Intersubband Photodetectors,” International Conference on Nitride Semiconductors 2013, Washington D.C., Aug. 2013.

 

M. Nami, A. Rishinaramangalam, and D. Feezell, “Analysis of Light Extraction Efficiency for GaN-Based Coaxial Microwall Light-Emitting Diodes,” International Conference on Nitride Semiconductors 2013, Washington D.C., Aug. 2013.

 

Y. Zhao, C. Y. Huang, C. C. Pan, S. Tanaka, Y. Kawaguchi, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (20-2-1) InGaN Light-Emitting Diodes and Laser Diodes,” International Workshop on Nitride Semiconductors 2012, Sapporo, Japan, Oct. 2012.

 

C. Holder, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of nonpolar GaN-based vertical cavity surface-emitting lasers,” International Workshop on Nitride Semiconductors 2012, Sapporo, Japan, Oct. 2012.

 

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar (20-2-1) Single-Quantum-Well Blue Light-Emitting Diodes,” International Workshop on Nitride Semiconductors 2012, Sapporo, Japan, Oct. 2012.

 

M.T. Hardy, N. Pfaff, Q. Yan, I. Koslow, P. S. Hsu, D. Feezell, S. Nakamura, J. Speck, and S. DenBaars, “Increased Polarization Ratio for Green (20-21) Light Emitting Diodes Grown on a 1D Relaxed In-GaN Buffer Layer,” International Workshop on Nitride Semiconductors 2012, Sapporo, Japan, Oct. 2012.

 

C. Y. Huang, M. T. Hardy, Y. Zhao, Q. Yan, A. Pourhashemi, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (20-2-1) Blue to Aquamarine Laser Diodes with Minimal Wavelength Blueshift,” International Workshop on Nitride Semiconductors 2012, Sapporo, Japan, Oct. 2012.

 

C. Y. Huang, Y. Zhao, F. Wu, Y. Kawaguchi, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth characteristics of InGaN/GaN quantum wells on semipolar (20-21) and (20-2-1) planes,” International Workshop on Nitride Semiconductors 2012, Sapporo, Japan, Oct. 2012.

 

C. Y. Huang, Y. Zhao, Q. Yan, Y. Kawaguchi, Y. R. Wu, D. F. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Carrier transports in semipolar multiple-quantum well light-emitting diodes,” International Workshop on Nitride Semiconductors 2012, Sapporo, Japan, Oct. 2012.

 

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. Romanov, K. Fujito, D.  F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Stress Relaxed III-Nitride Based Semipolar (11-22) Lasers,” International Workshop on Nitride Semiconductors 2012, Sapporo, Japan, Oct. 2012.

 

D. Feezell, C. Holder, J. Speck, S. DenBaars, and S. Nakamura, “Electrically-Injected Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers”, 2012 International Symposium on Compound Semiconductors (late news), Santa Barbara, Aug. 2012.

 

Y. Zhao, Q. Yan, K. Fujito, D. Feezell, S. DenBaars, J. Speck, C. Van de Walle, and S. Nakamura, “Optical Polarization Characteristics on Semipolar (30-31) and (30-3-1) InGaN/GaN Light-Emitting Diodes”, 2012 International Symposium on Compound Semiconductors, Santa Barbara, Aug. 2012.

 

M. Hardy, P. Hsu, I. Koslow, D. Feezell, S. Nakamura, J. Speck, and S. DenBaars, “Demonstration of a Relaxed Waveguide Semipolar (2021) InGaN/GaN Laser Diode,” 2012 Conference on Laser and Electro-Optics (CLEO), San Jose, May. 2012.

 

Y. Zhao, C. Huang, S. Tanaka, C. Pan, K. Fujito, D. Feezell, J. Speck, S. DenBaars, and S. Nakamura, “Semipolar (20-2-1) Blue and Green InGaN Light-Emitting Diodes,” 2012 Conference on Laser and Electro-Optics (CLEO), San Jose, May. 2012.

 

C. Huang, Y. Zhao, M. Hardy, D. Feezell, J. Speck, S. DenBaars, and S. Nakamura, “Semipolar (20-2-1) Laser Diodes (505 nm) with Wavelength-Stable InGaN/GaN Quantum Wells,” 2012 Conference on Laser and Electro-Optics (CLEO), San Jose, May. 2012.

 

D. Feezell, Y. Zhao, C. Pan, S. Tanaka, C. Huang, F. Wu, J. Speck, S. DenBaars, and S. Nakamura, “Development and Status of Nonpolar/Semipolar Light-Emitting Diodes,” NSF-KAUST-UCSB Workshop on Solid-State Lighting, Saudi Arabia, Feb. 2012.

 

D. Feezell and S. Nakamura, “Low-Droop and High Efficiency Semipolar (2021) Light-Emitting Diodes,” 2012 SPIE Photonics West Conference, San Francisco, Feb. 2012.

 

Y. Zhao, S. Tanaka, R. Chung, C. Pan, K. Fujito, D. Feezell, C. Van de Walle, J. Speck, S. DenBaars, and S. Nakamura, “Highly Polarized Spontaneous Emission from Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes,” Electronic Materials Conference, Santa Barbara, Jun. 2011.

 

D. Feezell, J. Speck, S. DenBaars, and S. Nakamura, “Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates,” 2011 CS MANTECH Conference, Palm Springs, May 2011.

 

J. Raring, E. Hall, M. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Kebort, Y. Chang, D. Feezell, R. Craig, J. Speck, S. DenBaars, S. Nakamura, “State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Defense, Security, and Sensing, Orlando, Apr. 2010.

 

J. Raring, E. Hall, M. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Feezell, R. Craig, J. Speck, S. DenBaars, S. Nakamura, “High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes,” SPIE Photonics West, San Francisco, Jan. 2010.

 

D. Kamber, S. Newman, F. Wu, A. Tyagi, D. Feezell, S. DenBaars, J. Speck, and S. Nakamura, “Selective Area Growth of AlN by Hydride Vapor Phase Epitaxy,” 2008 International Workshop on Nitrides, Montreux, Switzerland, Sep. 2008.

 

D. Feezell, M. Schmidt, A. Tyagi, H. Masui, R. Farrell, D. Cohen, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura, “High-Current-Density Electroluminescence Spectra of Nonpolar and Semipolar InGaN/GaN Blue and Green Light Emitting Diodes,” 2007 International Symposium on Compound Semiconductors, Kyoto, Japan, Oct. 2007.

 

D. Feezell, S. DenBaars, J. Speck, and S. Nakamura, “Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes,” Invited Talk 2007 Compound Semiconductor IC Symposium, Portland, OR, Oct. 2007.

 

M. Schmidt, R. Farrell, D. Feezell, M. Saito, K. Fujito, D. Cohen, S. Nakamura, J. Speck, and S. DenBaars, “AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes,” 2007 International Symposium on Compound Semiconductors, Kyoto, Japan, Oct. 2007.

 

D. Feezell, S. Nakamura, S. DenBaars, J. Speck, M. Schmidt, K-C Kim, R. Farrell, D. Cohen, M. Saito, H. Sato, H. Asamizu, A. Tyagi, H. Zhong, H. Masui, N. Fellows, M. Iza, and T. Hashimoto, “Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs,” Invited Talk LEOS 2007, Orlando, FL, Oct. 2007.

 

R. Farrell, D. Cohen, M. Schmidt, D. Feezell, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura, “Continuous-Wave Operation of AlGaN-Cladding-Free Nonpolar m-plane InGaN/GaN Laser Diodes,” 2007 International Symposium on Compound Semiconductors, Kyoto, Japan, Oct. 2007.

 

M. Schmidt, D. Feezell, R. Farrell, M. Saito, K. Fujito, D. Cohen, J. Speck, S. Nakamura, and S. DenBaars, “AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes,” 2007 International Conference on Nitride Semiconductors, Las Vegas, NV, Sep. 2007.

 

R. Farrell, D. Feezell, M. Schmidt, D. Haeger, K. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. Cohen, J. Speck, S.  DenBaars, and S. Nakamura, “Stable Continuous-wave Operation of AlGaN-Cladding-Free Nonpolar m-plane InGaN/GaN Laser Diodes,” 2007 International Conference on Nitride Semiconductors, Las Vegas, NV, Sep. 2007.

 

D. Feezell, D. Buell, L. Johansson, and L. Coldren, “High Differential Efficiency (>60%) Continuous-Wave Operation of 1.3mm InP-based VCSELs with Sb-Based DBRs,” Post-Deadline at 2005 Device Research Conference, Santa Barbara, CA, June 2005. 

 

D. Buell, D. Feezell, and L. Coldren, “Defect Reduction at the AlGaAsSb/InP Interface for Optimized Long Wavelength Vertical Cavity Lasers,” 2005 Electronic Materials Conference, Santa Barbara, CA, June 2005.

 

M.H.M. Reddy, D. Buell, A. Huntington, R. Koda, D. Feezell, T. Asano, J. Kim, E. Hall, S. Nakagawa, and L. Coldren, “Current Status of Epitaxial 1.31 – 1.55mm VCSELs on InP,” 2002 Digest of the LEOS Summer Topical Meetings, 2002.

 

M.H.M. Reddy, D. Buell, T. Asano, R. Koda, D. Feezell, A. Huntington, and L. Coldren, “Lattice-Matched Al0.95Ga0.05AsSb Oxide for Current Confinement in InP-Based Long Wavelength VCSELs,” 2002 International Conference on Molecular Beam Epitaxy, 2002.

 

Patents:

S. R. J. Brueck, S. D. Hersee, S. C. Lee, and D. Feezell, “Methods of Making Heteroepitaxial Layer on a Seed Area,” US Patent 9,142,400, 2015.

 

C.O. Holder, D. Feezell, S.P. DenBaars, J.S. Speck, and S. Nakamura, “Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser,” US Patent 9,136,673, 2015.

 

S.C. Lee, S. R. J. Brueck, and D. Feezell, “Gate-All-Around-Metal-Oxide-Semiconductor Transistors with Gate Oxides,” US Patent 9,076,813, 2015.

 

J. Raring, D. Feezell, N. Pfister, R. Sharma, M. Schmidt, C. Poblenz Elsass, Y.C. Chang, “Optical Device Structure Using GaN Substrates for Laser Applications,” US Patent 9,071,039, 2015.

 

R. Aldaz, A. David, D. Feezell, T. Katona, and R. Sharma, “Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening,” US Patent 9,000,466, 2015.

 

J. Raring, D. Feezell, and N. Pfister, “Self-aligned multi-dielectric-layer lift off process for laser diode stripes,” US Patent 8,728,842, 2014.

 

S. Nakamura, S. P. DenBaars, S. Tanaka, D. Feezell, Y. Zhao, C. C. Pan, “Low Droop Light Emitting Diode Structure On Gallium Nitride Semipolar Substrates,” US Patent 8,686,397, 2014.

 

J. Raring and D. Feezell, “Integrated Laser Diodes with Quality Facets on GaN Substrates,” US Patent 8,767,787, 2014.

 

M. D'evelyn, R. Sharma, E.M. Hall, and D. Feezell, “Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors, ”US Patent 8,618,560, 2013.

 

S. Nakamura, S.P. DenBaars, D. Feezell, J.S. Speck, and C.C. Pan, “Light-emitting diodes with low temperature dependence ,” US Patent App. 13/890,664, 2013.

 

S. Nakamura, S.P. DenBaars, D. Feezell, J.S. Speck, C.C. Pan, and S. Tanaka, “High output power, high efficiency blue light-emitting diodes,” US Patent App. 13/890,599, 2013.

​

C. Holder, D. Feezell, S. DenBaars, and S. Nakamura, “Method for the Reuse of Gallium Nitride Epitaxial Substrates,” US Patent 20,130,214,284, 2013.

 

J. Raring, D. Feezell, and N. Pfister, “Optical Device Structure Using Miscut GaN Substrates for Laser Applications,” US Patent 8,422,525, 2013.

 

Y. Zhao, S. Tanaka, C. Y. Huang, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High indium uptake and high polarization ratio for group-iii nitride optoelectronic devices fabricated on a semipolar (2021) plane of a gallium nitride substrate” US Patent Application #  20120273796 A1, 2012.

 

S. Nakamura, S. P. DenBaars, D. F. Feezell, C. C. Pan, Y. Zhao, and S. Tanaka, “High emission power and low efficiency droop semipolar blue light emitting diodes,” US Patent Application #  20120313077 A1, 2012.

 

S. Nakamura, S. P. DenBaars, S. Tanaka, D. F. Feezell, Y. Zhao, C. C. Pan, “Low Droop Light Emitting Diode Structure On Gallium Nitride Semipolar Substrates,” US Patent Application #  20120313076 A1, 2012.

 

J. Raring and D. Feezell, “Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates” US Patent #  8259769 B1, 2012.

 

D. Feezell, M. Schmidt, K. Kim, D. Cohen, J.  Speck, S. DenBaars, and S. Nakamura “Al(x)Ga(1-x)N-Cladding-Free Nonpolar III-Nitride Based Laser Diodes and Light-Emitting Diodes,” US Patent # 8211723 B2, 2012.

 

J. Raring, D. Feezell, and N. Pfister, “Self-aligned multi-dielectric-layer lift off process for laser diode stripes,” US Patent # 8143148 B1, 2012.

 

C. Poblenz, M. C. Schmidt, D. Feezell, J. Raring, and R. Sharma, “Method and structure for manufacture of light emitting diode devices using bulk GaN,” US Patent # 8252662 B1, 2012.

 

M. P. D’Evelyn, R. Sharma, E. Hall, and D. Feezell, “Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors,” US Patent # 8299473 B1, 2012.

 

D. Feezell, R. Sharma, A. Chakraborty, T. Trottier, T. Katona, and M. D’Evelyn, “High Voltage Device and Method for Optical Devices,” US Patent Application # 13/179,346, 2011.

 

M. D’Evelyn, R. Sharma, E. Hall, D. Feezell, and M. Schmidt, “Textured Surface Light-Emitting Diode and Method of Manufacture,” US Patent Application # 20100295088, 2010.

 

J. Raring, D. Feezell, N. Pfister, “Optical Device Structure Using GaN Substrates for Laser Applications,” US Patent Application # 12/868,441, 2010.

 

R. Sharma, T. Katona, and D. Feezell, “Light Emitting Diode Device with a Plurality of Roughened Surfaces, and Method for Fabricating Thereof,” US Patent Application # 12/861,765, 2010.

 

J. Raring and D. Feezell, “Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN With Yellow LED on Semipolar or Nonpolar GaN,” US Patent Application # 20100006873, 2009.

 

J. Raring, D. Feezell, and M. D’Evelyn, “Copacking Configurations for Nonpolar and/or Semipolar GaN LEDs,” US Patent Application # 20100001300, 2009.

 

J. Raring, D. Feezell, and S. Nakamura, “Selective Area Epitaxy Growth Method and Structure for Multi-Colored Devices,” US Patent Application # 20090309110, 2009.

 

J. Raring, D. Feezell, and S. Nakamura, “Selective Area Epitaxy Growth Method and Structure,” US Patent Application # 20090309127, 2009.

 

R. Farrell, M. Schmidt, K. Kim, D. Feezell, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura, “Optimization of Laser Bar Orientation For Nonpolar (Ga,Al,In,B)N Diode Lasers”, US Patent # 7,839,903, 2008.

 

D. Feezell, D. Cohen, R. Farrell, M. Ishida, and S. Nakamura, “Electrically-Pumped (Ga,In,Al)N Vertical-Cavity Surface-Emitting Laser”, US Patent # 7,480,322, 2007.