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The III-nitride materials and devices group is located in the Center for High Technology Materials (CHTM) at the University of New Mexico and is directed by Professor Daniel Feezell. The research interests of the group include epitaxial growth, fabrication, and characterization of group III-nitride materials and devices with a focus on nonpolar/semipolar orientations, solid-state lighting and high-efficiency LEDs, III-nitride nanophotonics, superluminescent diodes, visible edge-emitting and vertical-cavity surface-emitting lasers (VCSELs), power electronics, intersubband photodetectors, and nanoscale selective-area epitaxy.



Left to right:  Serdal Okur, Olivia Johnson, Mike Fairchild, Ashwin Rishinaramangalam, Morteza Monavarian, Prof. Feezell, Andrew Aragon, Mohsen Nami, Rhett Eller, Saadat Mishkat-Ul-Masabih, Isaac Stricklin, Arman Rashidi, Kenny DaVico

Daniel Feezell Center for High Technology Materials
Daniel Feezell Center for High Technology Materials
Daniel Feezell GaN LEDs Light Emitting Diodes
Daniel Feezell Center for High Technology Materials
Daniel Feezell Center for High Technology Materials


Prof. Feezell has received a grant from the Department of Energy (DOE) to develop superluminescent diodes for smart lighting systems. Read more here.


Three papers were presented at the Electronic Materials Conference at the University of Deleware.


Prof. Feezell received the UNM School of Engineering Junior Faculty Research Award.


Prof. Feezell has received the Director's Fellowship for the DARPA Young Faculty Award.



Prof. Feezell received a grant from ARO/ONR to develop high-speed nonpolar and semipolar LEDs.


Prof. Feezell has received an NSF Faculty Early Career Development (CAREER) Award to study nonpolar and semipolar GaN-based vertical-cavity surface-emitting lasers (VCSELs).  The abstract on the NSF website can be accessed here.



Prof. Feezell's postdoctoral advisor at UCSB, Prof. Shuji Nakamura, received the Nobel Prize in Physics for the invention of blue GaN-based LEDs.  Congratualtions, Shuji!



Postdoctoral Researcher Ashwin Rishinaramangalam  presented a paper at the 2014 Electronic Materials Conference entitled "Ordered Arrays of III-Nitride Core-Shell Nanostructures Using Selective-Area Epitaxy."



Prof. Feezell published a review article in Compound Semiconductor entitled "The Evolving GaN VCSEL."



Prof. Feezell gave a guest lecture at Southwestern Indian Polytechnic Institue entitled "Light-Emitting Diodes, Solid-State Lighting, and Smart Lighting"



Dr. Feezell was awarded the prestigeous DARPA Young Faculty Award for “High-Speed Nonpolar InGaN/GaN Light-Emitting Diodes Using Plasmonic Core-Shell Nanowires.”




Prof. Feezell and Prof. Shuji Nakamura from UCSB co-authored a book chapter entitled "Nonpolar and Semipolar Group III-Nitride Lasers" which appears in "Semiconductor lasers: Fundamentals and applications" by Woodhead Publishing (ISBN13: 9780857091215)


Daniel Feezell Nonpolar and semipolar GaN laser book chapter
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