III-Nitride Materials and Devices Group

 

The III-Nitride Materials and Devices Group at the University of New Mexico develops advanced semiconductor materials, devices, and photonic technologies based on III-nitride semiconductors. Our research spans materials growth, device fabrication, and optical, electrical, and structural characterization, with an emphasis on emerging technologies that push the performance of wide-bandgap semiconductors.

​

Our current research interests include high-speed and high-efficiency light-emitting diodes (LEDs) and micro-LEDs, UV and visible optoelectronics, lasers and nanophotonics, III-nitride integrated photonics, advanced epitaxial growth and selective-area epitaxy, and wide-bandgap electronic and optoelectronic devices. We work across the materials-to-device spectrum, using innovative approaches to understand and control the properties of III-nitride materials and translate them into new device technologies.

 

The group is part of the Center for High Technology Materials (CHTM) at the University of New Mexico and is directed by Professor Daniel Feezell.